SIB456DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

185m Ω @ 1.9A, 10V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Vgs (Max) :

±20V

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Rise Time :

45ns

Mount :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Length :

1.7mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

6.3A

Series :

TrenchFET®

Resistance :

185mOhm

Radiation Hardening :

No

Turn-Off Delay Time :

11 ns

Number of Channels :

1

Turn On Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 50V

Packaging :

Digi-Reel®

Power Dissipation :

2.4W

Package / Case :

PowerPAK® SC-75-6L

Weight :

95.991485mg

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

13 ns

Height :

800μm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

2.4W Ta 13W Tc

Threshold Voltage :

1.6V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

FET Type :

N-Channel

Width :

1.7mm

Published :

2013

Lead Free :

Lead Free