SI7958DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

5.89mm

Rise Time :

17ns

Terminal Form :

C BEND

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

7.2A

Nominal Vgs :

3 V

Drain to Source Breakdown Voltage :

40V

Avalanche Energy Rating (Eas) :

61 mJ

Transistor Application :

SWITCHING

Number of Pins :

8

Radiation Hardening :

No

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Published :

2011

REACH SVHC :

Unknown

Pin Count :

8

Package / Case :

PowerPAK® SO-8 Dual

Max Power Dissipation :

1.4W

Power Dissipation :

1.4W

Resistance :

16.5mOhm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Length :

4.9mm

JESD-30 Code :

R-XDSO-C6

Number of Channels :

2

Threshold Voltage :

3V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

66 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

506.605978mg

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

11.3A

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 11.3A, 10V

Height :

1.04mm

Base Part Number :

SI7958

Lead Free :

Lead Free

Turn On Delay Time :

17 ns

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

40A

Fall Time (Typ) :

17 ns

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Series :

TrenchFET®