SI7901EDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2016

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.3W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

JESD-609 Code :

e3

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

Rise Time :

4μs

Continuous Drain Current (ID) :

4.3A

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

48m Ω @ 6.3A, 4.5V

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

FET Feature :

Logic Level Gate

Package / Case :

PowerPAK® 1212-8 Dual

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

2.5 µs

FET Type :

2 P-Channel (Dual)

Resistance :

48mOhm

Length :

3.05mm

Turn-Off Delay Time :

15 µs

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Width :

3.05mm

Fall Time (Typ) :

12 μs

Vgs(th) (Max) @ Id :

1V @ 800μA

Terminal Finish :

PURE MATTE TIN

Height :

1.04mm

Operating Temperature :

-55°C~150°C TJ