SI7911DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

70 ns

Lead Free :

Lead Free

Pin Count :

8

Mount :

Surface Mount

Package / Case :

PowerPAK® 1212-8 Dual

Drain-source On Resistance-Max :

0.051Ohm

Turn On Delay Time :

20 ns

Published :

2012

Rise Time :

35ns

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

20A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Series :

TrenchFET®

Base Part Number :

SI7911

Terminal Finish :

PURE MATTE TIN

Transistor Application :

SWITCHING

Max Power Dissipation :

1.3W

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

C BEND

Fall Time (Typ) :

40 ns

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Rds On (Max) @ Id, Vgs :

51m Ω @ 5.7A, 4.5V

Element Configuration :

Dual

Continuous Drain Current (ID) :

4.2A

FET Feature :

Logic Level Gate

JESD-30 Code :

S-XDSO-C6

Pbfree Code :

yes

Number of Elements :

2

Number of Terminations :

6

Drain to Source Breakdown Voltage :

-20V