SI7904BDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

3.05mm

Number of Elements :

2

Number of Pins :

8

ECCN Code :

EAR99

Power Dissipation :

2.5W

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.1A, 4.5V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1V

FET Type :

2 N-Channel (Dual)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® 1212-8 Dual

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

6A

Element Configuration :

Dual

Fall Time (Typ) :

5 ns

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

2.5W

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Base Part Number :

SI7904

Turn-Off Delay Time :

25 ns

Mounting Type :

Surface Mount

Height :

1.04mm

Rise Time :

15ns

Continuous Drain Current (ID) :

6A

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

8V

Pin Count :

8

JESD-30 Code :

S-XDSO-C6

Resistance :

30mOhm

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 8V

Terminal Form :

C BEND

Published :

2014

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3.05mm

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Number of Terminations :

6

Power - Max :

17.8W

Series :

TrenchFET®

Turn On Delay Time :

5 ns

Transistor Element Material :

SILICON

Number of Channels :

2