SI7900AEDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Terminations :

5

Package / Case :

PowerPAK® 1212-8 Dual

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Terminal Finish :

PURE MATTE TIN

ECCN Code :

EAR99

Element Configuration :

Dual

Radiation Hardening :

No

JESD-30 Code :

S-XDSO-C5

Turn-Off Delay Time :

8.6 μs

Base Part Number :

SI7900

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

26m Ω @ 8.5A, 4.5V

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Series :

TrenchFET®

Fall Time (Typ) :

1.3 μs

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

12V

Published :

2014

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

30A

Max Power Dissipation :

1.5W

Continuous Drain Current (ID) :

6A

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

900mV @ 250μA

FET Type :

2 N-Channel (Dual) Common Drain

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

850 ns

Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A

Transistor Element Material :

SILICON

Number of Elements :

2

Rise Time :

1.3μs

Terminal Form :

C BEND