SI7909DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

3.05mm

Vgs(th) (Max) @ Id :

1V @ 700μA

Mounting Type :

Surface Mount

Turn-Off Delay Time :

90 ns

Drain to Source Resistance :

37mOhm

Packaging :

Tape and Reel (TR)

Height :

1.04mm

Series :

TrenchFET®

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Resistance :

37mOhm

Supplier Device Package :

PowerPAK® 1212-8 Dual

Published :

2016

Fall Time (Typ) :

85 ns

Max Power Dissipation :

1.3W

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

37mOhm @ 7.7A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

5.3A

Package / Case :

PowerPAK® 1212-8 Dual

Number of Channels :

2

Rds On Max :

37 mΩ

FET Type :

2 P-Channel (Dual)

Mount :

Surface Mount

Width :

3.05mm

Turn On Delay Time :

25 ns

Min Operating Temperature :

-55°C

Rise Time :

45ns

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Power - Max :

1.3W

Drain to Source Voltage (Vdss) :

12V

Current - Continuous Drain (Id) @ 25°C :

5.3A

Gate to Source Voltage (Vgs) :

8V