SI7945DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

30A

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

15 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

130 ns

Number of Pins :

8

Continuous Drain Current (ID) :

10.9A

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

7A

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® SO-8 Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Max Power Dissipation :

1.4W

Lead Free :

Lead Free

Radiation Hardening :

No

Element Configuration :

Dual

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Fall Time (Typ) :

15 ns

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

7A

Nominal Vgs :

20 V

Resistance :

20mOhm

REACH SVHC :

Unknown

JESD-30 Code :

R-XDSO-C6

Rds On (Max) @ Id, Vgs :

20m Ω @ 10.9A, 10V

Power Dissipation :

1.4W

Published :

2012

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Number of Elements :

2

Base Part Number :

SI7945

Series :

TrenchFET®

Threshold Voltage :

-3V

FET Type :

2 P-Channel (Dual)

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Case Connection :

DRAIN

Terminal Form :

C BEND