SI5975DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Rds On Max :

86 mΩ

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Published :

2016

Vgs(th) (Max) @ Id :

450mV @ 1mA (Min)

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

86mOhm @ 3.1A, 4.5V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.1A

Supplier Device Package :

1206-8 ChipFET™

Package / Case :

8-SMD, Flat Lead

Power - Max :

1.1W

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.1W

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3.1A

Drain to Source Voltage (Vdss) :

12V