SI5975DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

86mOhm @ 3.1A, 4.5V

Supplier Device Package :

1206-8 ChipFET™

FET Type :

2 P-Channel (Dual)

Package / Case :

8-SMD, Flat Lead

Number of Pins :

8

Drain to Source Voltage (Vdss) :

12V

Width :

1.65mm

FET Feature :

Logic Level Gate

Rds On Max :

86 mΩ

Fall Time (Typ) :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.1W

Max Operating Temperature :

150°C

Height :

1.1mm

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Mounting Type :

Surface Mount

Weight :

84.99187mg

Power - Max :

1.1W

Vgs(th) (Max) @ Id :

450mV @ 1mA (Min)

Gate to Source Voltage (Vgs) :

8V

Number of Channels :

2

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

3.1A

Length :

3.05mm

Turn On Delay Time :

10 ns

Series :

TrenchFET®

Element Configuration :

Dual

Max Power Dissipation :

1.1W

Turn-Off Delay Time :

31 ns

RoHS Status :

ROHS3 Compliant

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

3.1A

Mount :

Surface Mount

Drain to Source Resistance :

86mOhm

Rise Time :

20ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-12V

Operating Temperature :

-55°C~150°C TJ