SI5935DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

86mOhm @ 3A, 4.5V

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Fall Time (Typ) :

32 ns

Power - Max :

1.1W

Series :

TrenchFET®

Power Dissipation :

1.1W

Lead Free :

Lead Free

Max Power Dissipation :

1.1W

Current - Continuous Drain (Id) @ 25°C :

3A

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Height :

1.1mm

Threshold Voltage :

1V

Gate to Source Voltage (Vgs) :

8V

FET Feature :

Logic Level Gate

Drain to Source Resistance :

86mOhm

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

18 ns

Mount :

Surface Mount

FET Type :

2 P-Channel (Dual)

Supplier Device Package :

1206-8 ChipFET™

Published :

2016

Rise Time :

32ns

Mounting Type :

Surface Mount

Package / Case :

8-SMD, Flat Lead

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

-4.1A

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Base Part Number :

SI5935

Drain to Source Breakdown Voltage :

-20V

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Weight :

84.99187mg

Rds On Max :

86 mΩ

Turn-Off Delay Time :

42 ns

Length :

3.05mm

Width :

1.65mm

Drain to Source Voltage (Vdss) :

20V