SI5935CDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

PURE MATTE TIN

Number of Terminations :

8

ECCN Code :

EAR99

Rise Time :

32ns

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

4A

Package / Case :

8-SMD, Flat Lead

Weight :

84.99187mg

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

3.1A

Height :

1.1mm

Terminal Form :

C BEND

Radiation Hardening :

No

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Drain Current-Max (Abs) (ID) :

4A

Turn On Delay Time :

10 ns

Max Power Dissipation :

3.1W

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.1A, 4.5V

FET Feature :

Standard

Element Configuration :

Dual

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Drain-source On Resistance-Max :

0.1Ohm

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

32 ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

25 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Power Dissipation :

1.3W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Width :

1.65mm

FET Type :

2 P-Channel (Dual)

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Length :

3.05mm

Base Part Number :

SI5935

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Transistor Element Material :

SILICON