SI5933DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

1.65mm

Drain to Source Resistance :

110mOhm

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Rise Time :

30ns

Supplier Device Package :

1206-8 ChipFET™

Published :

2007

Max Operating Temperature :

150°C

Turn-Off Delay Time :

27 ns

Continuous Drain Current (ID) :

-2.7A

Rds On Max :

110 mΩ

Series :

TrenchFET®

Number of Elements :

2

Drain to Source Breakdown Voltage :

-20V

Length :

3.05mm

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

30 ns

Height :

1.1mm

Mounting Type :

Surface Mount

Weight :

84.99187mg

Max Power Dissipation :

1.1W

Base Part Number :

SI5933

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Power Dissipation :

1.1W

Packaging :

Tape and Reel (TR)

Power - Max :

1.1W

Rds On (Max) @ Id, Vgs :

110mOhm @ 2.7A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.7A

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

30 ns

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Min Operating Temperature :

-55°C

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Number of Channels :

2