SI5920DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On Max :

32 mΩ

Continuous Drain Current (ID) :

4A

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

3.12W

Current - Continuous Drain (Id) @ 25°C :

4A

Packaging :

Tape and Reel (TR)

Package / Case :

8-SMD, Flat Lead

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Supplier Device Package :

1206-8 ChipFET™

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

32mOhm

Rds On (Max) @ Id, Vgs :

32mOhm @ 6.8A, 4.5V

Series :

TrenchFET®

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

8V

Power - Max :

3.12W

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 4V

Mounting Type :

Surface Mount

Base Part Number :

SI5920

Operating Temperature :

-55°C~150°C TJ

Published :

2010

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

680pF