SI5915DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

3.05mm

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Radiation Hardening :

No

Base Part Number :

SI5915

Drain to Source Voltage (Vdss) :

8V

Fall Time (Typ) :

70 ns

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

3.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Operating Temperature :

-55°C~150°C TJ

Power - Max :

1.1W

Continuous Drain Current (ID) :

-3.4A

Supplier Device Package :

1206-8 ChipFET™

Number of Pins :

8

Min Operating Temperature :

-55°C

Weight :

84.99187mg

Rds On Max :

70 mΩ

Height :

1.1mm

Packaging :

Tape and Reel (TR)

Drain to Source Resistance :

70mOhm

Max Operating Temperature :

150°C

Max Power Dissipation :

1.1W

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Power Dissipation :

2.1W

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

70mOhm @ 3.4A, 4.5V

Rise Time :

70ns

Number of Channels :

2

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Published :

2005

Lead Free :

Lead Free

Width :

1.65mm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn On Delay Time :

20 ns