SI5915BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Terminal Form :

C BEND

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Power - Max :

3.1W

Power Dissipation :

1.7W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Package / Case :

8-SMD, Flat Lead

Drain Current-Max (Abs) (ID) :

4A

Max Power Dissipation :

3.1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

12 ns

Series :

TrenchFET®

Turn-Off Delay Time :

20 ns

Rise Time :

12ns

Drain-source On Resistance-Max :

0.07Ohm

Continuous Drain Current (ID) :

4A

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Number of Pins :

8

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 4V

Drain to Source Breakdown Voltage :

8V

Pulsed Drain Current-Max (IDM) :

10A

Element Configuration :

Dual

Base Part Number :

SI5915

Transistor Application :

SWITCHING

Published :

2010

Pin Count :

8

Rds On (Max) @ Id, Vgs :

70m Ω @ 3.3A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 8V