SI1988DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

6

Nominal Vgs :

1 V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.3A

Power Dissipation :

740mW

Threshold Voltage :

1V

Published :

2013

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

Resistance :

168MOhm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

Unknown

Rise Time :

20ns

Max Power Dissipation :

740mW

Number of Elements :

2

Turn-Off Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Fall Time (Typ) :

20 ns

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

6

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Power - Max :

1.25W

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

168m Ω @ 1.4A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 8V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

8 ns

Terminal Form :

Gull wing

Element Configuration :

Dual

Base Part Number :

SI1988

Radiation Hardening :

No