SI1900DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.59A

Rds On (Max) @ Id, Vgs :

480m Ω @ 590mA, 10V

Published :

2017

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

630mA Ta 590mA Ta

FET Feature :

Standard

Number of Elements :

2

Series :

TrenchFET®

Terminal Form :

Gull wing

Power - Max :

300mW 270mW

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

6

Factory Lead Time :

14 Weeks

Power Dissipation-Max (Abs) :

0.3W

JESD-30 Code :

R-PDSO-G6

Drain-source On Resistance-Max :

0.48Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99