SI1913DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

880mA

Base Part Number :

SI1913

Continuous Drain Current (ID) :

-1A

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

15 ns

Turn On Delay Time :

18 ns

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

570mW

Vgs(th) (Max) @ Id :

1V @ 100µA

Number of Elements :

2

Fall Time (Typ) :

25 ns

Resistance :

490mOhm

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

490mOhm @ 880mA, 4.5V

Mounting Type :

Surface Mount

Nominal Vgs :

-450 mV

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

Unknown

FET Feature :

Logic Level Gate

Published :

2008

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Lead Free

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Supplier Device Package :

SC-70-6 (SOT-363)

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

-450mV

Radiation Hardening :

No

Element Configuration :

Dual

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

570mW

FET Type :

2 P-Channel (Dual)

Rds On Max :

490 mΩ

Drain to Source Resistance :

490mOhm

Power - Max :

570mW

Max Operating Temperature :

150°C

Rise Time :

25ns

Packaging :

Tape and Reel (TR)