SI1912EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

570mW

Turn-Off Delay Time :

350 ns

JESD-609 Code :

e3

Width :

1.25mm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

450mV @ 100μA (Min)

Number of Elements :

2

FET Feature :

Logic Level Gate

Pin Count :

6

Base Part Number :

SI1912

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

1.13A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

85 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Additional Feature :

ESD Protection

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

1.13A

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Nominal Vgs :

450 mV

Continuous Drain Current (ID) :

1.28A

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.05mm

Number of Terminations :

6

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

450mV

Resistance :

280mOhm

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

Series :

TrenchFET®

Height :

900μm

Turn On Delay Time :

45 ns

Max Power Dissipation :

570mW

Drain to Source Breakdown Voltage :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

85ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE