SI1917EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

1A

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

450mV @ 100μA (Min)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Published :

2013

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Number of Elements :

2

Rise Time :

470ns

Continuous Drain Current (ID) :

-1.15A

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Rds On (Max) @ Id, Vgs :

370m Ω @ 1A, 4.5V

Resistance :

370mOhm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

570mW

Series :

TrenchFET®

Transistor Element Material :

SILICON

Nominal Vgs :

-450 mV

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Pure Matte Tin (Sn)

Radiation Hardening :

No

Fall Time (Typ) :

470 ns

Turn-Off Delay Time :

960 ns

Base Part Number :

SI1917

Pbfree Code :

yes

Element Configuration :

Dual

Max Power Dissipation :

570mW

Turn On Delay Time :

170 ns

Number of Terminations :

6

Pin Count :

6

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

1A