SI1902DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Max Power Dissipation :

270mW

Turn On Delay Time :

10 ns

Pin Count :

6

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

385m Ω @ 660mA, 4.5V

REACH SVHC :

No SVHC

Width :

1.25mm

Drain to Source Breakdown Voltage :

20V

Factory Lead Time :

14 Weeks

Power Dissipation :

270mW

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

660mA

Fall Time (Typ) :

16 ns

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Height :

1.1mm

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Lead Free :

Lead Free

Length :

2mm

Rise Time :

16ns

FET Feature :

Logic Level Gate

Max Junction Temperature (Tj) :

150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Contact Plating :

Tin

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SI1902

Resistance :

385mOhm

Nominal Vgs :

600 mV

Terminal Form :

Gull wing

Turn-Off Delay Time :

10 ns

Number of Channels :

2

Weight :

7.512624mg

Transistor Element Material :

SILICON

Element Configuration :

Dual

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2016

Threshold Voltage :

1.5V