SI1913EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Rise Time :

480ns

Nominal Vgs :

-450 mV

Series :

TrenchFET®

Drain Current-Max (Abs) (ID) :

0.88A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

450mV @ 100μA

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Fall Time (Typ) :

850 ns

Power Dissipation :

740mW

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-450mV

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

-1A

Resistance :

490mOhm

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

880mA

Turn-Off Delay Time :

840 ns

Turn On Delay Time :

150 ns

Transistor Application :

SWITCHING

Number of Terminations :

6

Max Power Dissipation :

570mW

Drain to Source Breakdown Voltage :

20V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Published :

2016

Operating Mode :

ENHANCEMENT MODE

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Base Part Number :

SI1913

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

ECCN Code :

EAR99

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

490m Ω @ 880mA, 4.5V

FET Type :

2 P-Channel (Dual)

Pin Count :

6

Terminal Finish :

Matte Tin (Sn)