SI1903DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

0.41A

Turn-Off Delay Time :

8.5 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 P-Channel (Dual)

Drain to Source Breakdown Voltage :

20V

Resistance :

995mOhm

Number of Terminations :

6

Transistor Element Material :

SILICON

Pin Count :

6

Pbfree Code :

yes

Max Power Dissipation :

270mW

Current - Continuous Drain (Id) @ 25°C :

410mA

Terminal Form :

Gull wing

Rise Time :

20ns

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

20 ns

REACH SVHC :

No SVHC

Element Configuration :

Dual

Turn On Delay Time :

7.5 ns

ECCN Code :

EAR99

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e3

Threshold Voltage :

-1.5V

Feedback Cap-Max (Crss) :

888 pF

Continuous Drain Current (ID) :

440mA

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI1903

Radiation Hardening :

No

Nominal Vgs :

-1.5 V

Mount :

Surface Mount

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

995m Ω @ 410mA, 4.5V

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Power Dissipation :

270mW

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA