SI1905BDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

542mOhm @ 580mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

630mA

Input Capacitance :

62pF

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 4V

Mount :

Surface Mount

Turn On Delay Time :

9 ns

Published :

2010

Element Configuration :

Dual

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Lead Free :

Lead Free

FET Type :

2 P-Channel (Dual)

Fall Time (Typ) :

60 ns

Number of Pins :

6

Continuous Drain Current (ID) :

-630mA

Resistance :

542mOhm

Number of Elements :

2

Turn-Off Delay Time :

50 ns

Max Operating Temperature :

150°C

Rise Time :

40ns

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

8V

Power Dissipation :

3.01W

Packaging :

Tape and Reel (TR)

Supplier Device Package :

SC-70-6 (SOT-363)

Rds On Max :

542 mΩ

Max Power Dissipation :

357mW

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Base Part Number :

SI1905

Package / Case :

6-TSSOP, SC-88, SOT-363

Threshold Voltage :

-1V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Power - Max :

357mW

Drain to Source Resistance :

542mOhm

Nominal Vgs :

-1 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)