SI1972DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Element Configuration :

Dual

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Base Part Number :

SI1972

Number of Pins :

6

Number of Terminations :

6

Transistor Application :

SWITCHING

Power Dissipation :

740mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

5 ns

Number of Elements :

2

Vgs(th) (Max) @ Id :

2.8V @ 250μA

DS Breakdown Voltage-Min :

30V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Series :

TrenchFET®

Pin Count :

6

Terminal Form :

Gull wing

Published :

2013

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

1.3A

Resistance :

190mOhm

Length :

2mm

Transistor Element Material :

SILICON

Width :

1.25mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

740mW

Mount :

Surface Mount

Height :

1mm

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

10ns

Threshold Voltage :

2.8V

Rds On (Max) @ Id, Vgs :

225m Ω @ 1.3A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Power - Max :

1.25W

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 10V

Nominal Vgs :

2.8 V

FET Feature :

Standard