SI1970DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

740mW

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

95pF @ 15V

Terminal Form :

Gull wing

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 10V

Rds On (Max) @ Id, Vgs :

225m Ω @ 1.2A, 4.5V

Number of Terminations :

6

Mounting Type :

Surface Mount

Number of Elements :

2

Published :

2009

Continuous Drain Current (ID) :

1.3A

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SI1970

ECCN Code :

EAR99

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.25W

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING