SI1967DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

2 ns

Rise Time :

27ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

TrenchFET®

FET Type :

2 P-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 8V

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

6

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

Number of Pins :

6

Drain Current-Max (Abs) (ID) :

1A

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.1mm

Power Dissipation :

740mW

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Weight :

28.009329mg

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

6

Max Power Dissipation :

1.25W

Base Part Number :

SI1967

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-1V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.3A

Published :

2010

Continuous Drain Current (ID) :

-1A

Fall Time (Typ) :

10 ns

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

490m Ω @ 910mA, 4.5V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Resistance :

490mOhm