SI1965DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

12V

Radiation Hardening :

No

Number of Terminations :

6

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Power Dissipation :

740mW

Mount :

Surface Mount

Published :

2010

FET Type :

2 P-Channel (Dual)

Length :

2mm

Weight :

28.009329mg

Width :

1.25mm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

1.3A

Base Part Number :

SI1965

Drain Current-Max (Abs) (ID) :

1.3A

Turn On Delay Time :

12 ns

Rise Time :

27ns

Number of Elements :

2

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Height :

1mm

Terminal Form :

Gull wing

ECCN Code :

EAR99

Series :

TrenchFET®

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

15 ns

Continuous Drain Current (ID) :

1.14A

Pbfree Code :

yes

Resistance :

390mOhm

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 6V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Fall Time (Typ) :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 8V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

1.25W

Operating Mode :

ENHANCEMENT MODE