SI1926DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

13 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Turn On Delay Time :

6.5 ns

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Pin Count :

6

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Fall Time (Typ) :

14 ns

Contact Plating :

Tin

Max Power Dissipation :

510mW

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Number of Elements :

2

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

370mA

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rise Time :

12ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G6

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 340mA, 10V

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

14 Weeks

Published :

2014

Input Capacitance (Ciss) (Max) @ Vds :

18.5pF @ 30V

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V