SI1926DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12 ns

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2.5V

Factory Lead Time :

14 Weeks

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-TSSOP, SC-88, SOT-363

Input Capacitance (Ciss) (Max) @ Vds :

18.5pF @ 30V

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Contact Plating :

Tin

Resistance :

1.4Ohm

Terminal Form :

Gull wing

Pbfree Code :

yes

Lead Free :

Lead Free

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

0.34A

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Turn On Delay Time :

6.5 ns

Continuous Drain Current (ID) :

370mA

Mount :

Surface Mount

Weight :

28.009329mg

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Rise Time :

12ns

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

TrenchFET®

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Max Power Dissipation :

510mW

Width :

1.25mm

Base Part Number :

SI1926

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Pin Count :

6

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Turn-Off Delay Time :

13 ns

Mounting Type :

Surface Mount

Published :

2015

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 340mA, 10V

Number of Elements :

2