RF4E100AJTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0124Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 10A, 4.5V

Terminal Position :

Dual

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Power Dissipation-Max :

2W Tc

FET Type :

N-Channel

Factory Lead Time :

20 Weeks

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

10A

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Published :

2015

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-PowerUDFN

Pulsed Drain Current-Max (IDM) :

36A

Number of Terminations :

6

JESD-30 Code :

S-PDSO-N6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

6.7 mJ

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Number of Elements :

1

Surface Mount :

yes