RF4E100AJTCR

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Mfr.Part #
RF4E100AJTCR
Manufacturer
ROHM Semiconductor
Package / Case
8-PowerUDFN
Datasheet
Download
Description
MOSFET N-CH 30V 10A HUML2020L8
Stock
2,400
In Stock :
2,400

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
10A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
8-PowerUDFN
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
1460pF @ 15V
Number of Elements :
1
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
2W Tc
DS Breakdown Voltage-Min :
30V
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
10A Ta
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±12V
Factory Lead Time :
20 Weeks
Surface Mount :
yes
Drain-source On Resistance-Max :
0.0124Ohm
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Rds On (Max) @ Id, Vgs :
12.4m Ω @ 10A, 4.5V
Terminal Position :
Dual
Avalanche Energy Rating (Eas) :
6.7 mJ
Published :
2015
ECCN Code :
EAR99
Terminal Form :
NO LEAD
Case Connection :
DRAIN
Number of Terminations :
6
Vgs(th) (Max) @ Id :
1.5V @ 1mA
JESD-30 Code :
S-PDSO-N6
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Packaging :
Cut Tape (CT)
Pulsed Drain Current-Max (IDM) :
36A
Transistor Element Material :
SILICON
Datasheets
RF4E100AJTCR
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RF4E100AJTCR from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerUDFN, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, RF4E100AJTCR pinout, RF4E100AJTCR datasheet PDF, RF4E100AJTCR amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RF4E100AJTCR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RF4E100AJTCR


N-Channel Cut Tape (CT) 12.4m Ω @ 10A, 4.5V ±12V 1460pF @ 15V 13nC @ 4.5V 30V 8-PowerUDFN

RF4E100AJTCR Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 6.7 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1460pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 10A.Pulsed drain current is maximum rated peak drain current 36A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V volts (4.5V).

RF4E100AJTCR Features


the avalanche energy rating (Eas) is 6.7 mJ
based on its rated peak drain current 36A.
a 30V drain to source voltage (Vdss)


RF4E100AJTCR Applications


There are a lot of ROHM Semiconductor
RF4E100AJTCR applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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