RF4E100AJTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2015

Drain-source On Resistance-Max :

0.0124Ohm

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

10A Ta

JESD-30 Code :

S-PDSO-N6

Transistor Application :

SWITCHING

Factory Lead Time :

20 Weeks

Vgs (Max) :

±12V

Pulsed Drain Current-Max (IDM) :

36A

Number of Elements :

1

Reach Compliance Code :

not_compliant

Terminal Form :

NO LEAD

Case Connection :

DRAIN

Package / Case :

8-PowerUDFN

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

10A

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

6.7 mJ

Power Dissipation-Max :

2W Tc

ECCN Code :

EAR99

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 10A, 4.5V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)