RF4E100AJTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Package / Case :

8-PowerUDFN

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Power Dissipation-Max :

2W Tc

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Factory Lead Time :

20 Weeks

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 10A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Pulsed Drain Current-Max (IDM) :

36A

Drain Current-Max (Abs) (ID) :

10A

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0124Ohm

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

S-PDSO-N6

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

6.7 mJ

Terminal Position :

Dual

Published :

2015

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)