RF4E070BNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

28.6m Ω @ 7A, 10V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Elements :

1

Vgs (Max) :

±20V

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Rise Time :

8ns

Package / Case :

8-PowerUDFN

Time@Peak Reflow Temperature-Max (s) :

10

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2W Ta

FET Type :

N-Channel

Fall Time (Typ) :

5 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

23 ns

JESD-30 Code :

S-PDSO-N6

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 15V

Factory Lead Time :

10 Weeks

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Pins :

8

Turn On Delay Time :

6 ns

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

Continuous Drain Current (ID) :

7A

Drain-source On Resistance-Max :

0.04Ohm

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

7A