RF4E070GNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminations :

6

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

7A

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

16.5 ns

JESD-30 Code :

S-PDSO-N6

Drain-source On Resistance-Max :

0.03Ohm

Rds On (Max) @ Id, Vgs :

21.4m Ω @ 7A, 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Number of Pins :

8

ECCN Code :

EAR99

Terminal Position :

Dual

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Rise Time :

4ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Factory Lead Time :

20 Weeks

Packaging :

Tape and Reel (TR)

Published :

2013

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

2W Ta

Turn On Delay Time :

5.8 ns

Number of Channels :

1

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Fall Time (Typ) :

2.8 ns

Terminal Form :

NO LEAD

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Package / Case :

8-PowerUDFN

Vgs(th) (Max) @ Id :

2.5V @ 250μA