RF4E110GNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

11A

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Transistor Application :

SWITCHING

Number of Pins :

8

Terminal Position :

Dual

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Rise Time :

5.5ns

Terminal Form :

NO LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

9 ns

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

11.3m Ω @ 11A, 10V

Factory Lead Time :

20 Weeks

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

504pF @ 15V

Turn-Off Delay Time :

21 ns

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Package / Case :

8-PowerUDFN

Fall Time (Typ) :

3 ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

44A

JESD-30 Code :

S-PDSO-N6

Published :

2016

Number of Terminations :

6

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

2W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA