RF4E060AJTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Package / Case :

8-PowerUDFN

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

37m Ω @ 6A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Vgs (Max) :

±12V

Number of Terminations :

6

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

3 mJ

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1.5V @ 1mA

JESD-30 Code :

S-PDSO-N6

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.037Ohm

Power Dissipation-Max :

2W Ta

Pulsed Drain Current-Max (IDM) :

24A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 15V