RF4E080GNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Operating Temperature :

150°C TJ

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

20 Weeks

Terminal Form :

NO LEAD

Continuous Drain Current (ID) :

8A

Fall Time (Typ) :

2.4 ns

Package / Case :

8-PowerUDFN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Rise Time :

3.6ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

17.6m Ω @ 8A, 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

32A

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Published :

2015

JESD-30 Code :

S-PDSO-N6

Number of Channels :

1

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6.9 ns

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Terminal Position :

Dual

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 15V

Case Connection :

DRAIN

Power Dissipation-Max :

2W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

17.3 ns

Drain to Source Breakdown Voltage :

30V

Drain Current-Max (Abs) (ID) :

8A

FET Type :

N-Channel

Mount :

Surface Mount