RF4E110BNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2015

JESD-30 Code :

S-PDSO-N6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

20 Weeks

Element Configuration :

Single

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

43 ns

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Power Dissipation-Max :

2W Ta

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 15V

Operating Temperature :

150°C TJ

Rise Time :

12ns

FET Type :

N-Channel

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

44A

Fall Time (Typ) :

11 ns

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

11.1m Ω @ 11A, 10V

Turn On Delay Time :

14 ns

Number of Terminations :

6

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

11A

Package / Case :

8-PowerUDFN

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN