RF4E075ATTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

21.7m Ω @ 7.5A, 10V

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

30A

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

10.6 mJ

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Number of Elements :

1

Operating Temperature :

150°C TJ

FET Type :

P-Channel

Published :

2015

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain-source On Resistance-Max :

0.0317Ohm

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation-Max :

2W Ta

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Mount :

Surface Mount

Terminal Form :

NO LEAD

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

S-PDSO-N6

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 15V

Continuous Drain Current (ID) :

7.5A

Package / Case :

8-PowerUDFN