RD3P200SNFRATL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Drain Current-Max (Abs) (ID) :

20A

Pulsed Drain Current-Max (IDM) :

80A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

Automotive, AEC-Q101

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

72 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

20W Tc

Terminal Position :

Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

46m Ω @ 20A, 10V

Drain-source On Resistance-Max :

0.05Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 25V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING