RD3P050SNTL1
- Mfr.Part #
- RD3P050SNTL1
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5A TO252
- Stock
- 2,077
- In Stock :
- 2,077
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 15W Tc
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 16 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 530pF @ 25V
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 100V
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.205Ohm
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 5A, 10V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Drain Current-Max (Abs) (ID) :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Pulsed Drain Current-Max (IDM) :
- 20A
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Datasheets
- RD3P050SNTL1

N-Channel Tape & Reel (TR) 190m Ω @ 5A, 10V ±20V 530pF @ 25V 14nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
RD3P050SNTL1 Overview
The maximum input capacitance of this device is 530pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 20A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (4V 10V), this device helps reduce its power consumption.
RD3P050SNTL1 Features
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)
RD3P050SNTL1 Applications
There are a lot of ROHM Semiconductor
RD3P050SNTL1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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