RD3P175SNFRATL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

35A

Rds On (Max) @ Id, Vgs :

105m Ω @ 8.8A, 10V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Series :

Automotive, AEC-Q101

Vgs (Max) :

±20V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

20W Tc

DS Breakdown Voltage-Min :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.119Ohm

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

17.5A

Number of Elements :

1

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

17.5A Ta

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V