RD3P100SNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

10A

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

20A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Position :

Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Rds On (Max) @ Id, Vgs :

133m Ω @ 5A, 10V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power Dissipation-Max :

20W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.147Ohm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks