RD3P175SNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

105m Ω @ 8.8A, 10V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100V

Current - Continuous Drain (Id) @ 25°C :

17.5A Ta

Power Dissipation-Max :

20W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

35A

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

17.5A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.119Ohm