RD3P08BBDTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

119W Ta

Avalanche Energy Rating (Eas) :

29 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

1940pF @ 50V

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 80A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

160A

Surface Mount :

yes

FET Type :

N-Channel

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Position :

Single

Number of Terminations :

2

Operating Temperature :

150°C TJ

DS Breakdown Voltage-Min :

100V

Factory Lead Time :

16 Weeks

Drain-source On Resistance-Max :

0.0116Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

80A Ta

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V