RD3P130SPTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Operating Temperature :

150°C TJ

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

FET Type :

P-Channel

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

13A

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Surface Mount :

yes

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

52A

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

200m Ω @ 6.5A, 10V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain-source On Resistance-Max :

0.23Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

20W Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED