RD3P100SNFRATL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

20A

Case Connection :

DRAIN

Power Dissipation-Max :

20W Tc

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.147Ohm

Drain Current-Max (Abs) (ID) :

10A

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

133m Ω @ 5A, 10V