QS5U36TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

FET Feature :

Schottky Diode (Isolated)

Lead Free :

Lead Free

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 10V

Continuous Drain Current (ID) :

2.5A

Drain-source On Resistance-Max :

0.104Ohm

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Fall Time (Typ) :

15 ns

Turn On Delay Time :

6 ns

Number of Elements :

1

Vgs (Max) :

±10V

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

10V

Number of Terminations :

5

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4.5V

Power Dissipation-Max :

1.25W Ta

Power Dissipation :

900mW

Transistor Application :

SWITCHING

Number of Pins :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

81m Ω @ 2.5A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

30 ns

Published :

2008

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Rise Time :

15ns

Package / Case :

SOT-23-5 Thin, TSOT-23-5

FET Type :

N-Channel