QS5U12TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

5

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 10V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Turn On Delay Time :

8 ns

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

FET Feature :

Schottky Diode (Isolated)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Pin Count :

5

Terminal Position :

Dual

Lead Free :

Lead Free

Published :

2006

Element Configuration :

Single

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

2A

Rise Time :

10ns

Number of Pins :

5

Power Dissipation :

900mW

Terminal Form :

Gull wing

Mount :

Surface Mount

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 4.5V

Turn-Off Delay Time :

21 ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2A

Number of Elements :

1

Factory Lead Time :

20 Weeks

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 4.5V

JESD-609 Code :

e1

Current Rating :

2A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Voltage - Rated DC :

30V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.25W Ta