QS5U34TR
- Mfr.Part #
- QS5U34TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.5A TSMT5
- Stock
- 14,240
- In Stock :
- 14,240
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 6
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 700mW
- JESD-609 Code :
- e1
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 1.5A
- Resistance :
- 310mOhm
- Terminal Finish :
- TIN SILVER COPPER
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 5
- Rds On Max :
- 180 mΩ
- JESD-30 Code :
- R-PDSO-G5
- Fall Time (Typ) :
- 3 ns
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 10V
- Published :
- 2007
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Pin Count :
- 5
- Package / Case :
- SOT-23-5
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 900mW
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 20 ns
- Turn On Delay Time :
- 5 ns
- Rise Time :
- 5ns
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 130mOhm
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance :
- 110pF
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- QS5U34TR

Tape & Reel (TR) 20V SOT-23-5
QS5U34TR Overview
This device has a continuous drain current (ID) of [1.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.MOSFETs have 130mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).
QS5U34TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 130mOhm
a 20V drain to source voltage (Vdss)
QS5U34TR Applications
There are a lot of ROHM Semiconductor
QS5U34TR applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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